(i : ::ii? ri?.t, \. \ : i~?:. i- /? _.? / i? ~?? )/ ,.a ,+ zx? _p? r i, www.datasheet.co.kr datasheet pdf - http://www..net/
electrical characteristics (ta = 25c unless otherwise noted) characteristic svmbol min *forward switching voltage in5158, in5782, in5788 in5159, in5783, in5789 in5160, in5784, in5790 in5779, in5785, in5791 in5780, in5786, in5792 in5781, 1n5787, 1n5793 vs 8.0 9.0 10 11 12 13 *forward switching current ln5158thru in5160, in5779 thru in5781 in5782 thru in5793 ~ ?s - ? *forward off-state current ifm ? (vf = 0.75x vs) 1 *reverse current -~ irm ~ ? (vr = vrm) \ ?holding current ln5158thru in5160, 1n5779 1.0 thru in5781 1n5782 thru in5787 , i 10 in5788 thru 1 n5793 i 0.1 : (ac voltage = 10 mv, vf = o, f = 100 khz) ?q o ~ . . ????_ turn-on time (figure 2) ~< ,;,:.~ ?on _: ? ..$ ?<\* . ?? turn-off time (figure 3) .*:* . . . . ~. ?*:. ,,,, \ ,. . ~,l. toff : ? -.. . . . . ,,.. !,, . . . vlps i ? f 0.1 ~ i ?, 0.1 ? i 0.1 i ? i 0.1 ~ i ???? i-i?, [ 75(1) __, 250(1) : ? ns ! (+) (-) scope r a unit t l?l . . . . under .20: lb when mwtooth waveform appears at tp-1, t = toff .- www.datasheet.co.kr datasheet pdf - http://www..net/
figure 4 ? typical forward conduction characteristics 50 40 30 20 1.0 5,0 7.0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 vf, instantaneous forward voltage (volts) 1.5 ?75 ?50 ?25 o 25 50 75 100 125 150 ta, ambient temperature (oc) \. \ 5.0 3.0 2.0 \ \ \ \ \ 1 1.0 0.7 0.5 0.3 0.2 1 ,-. 0.1 ?75 ?50 ?25 o 25 50 75 100 125 150 ta, ambient temperature (c) i ?75 ?50 -25 0 25 50 75 100 125 150 ta, ambient temperature (c) ( ? 3 www.datasheet.co.kr datasheet pdf - http://www..net/
i ( dvldt is if ] fm ih ?pulse irm pd ?v 4-layer diode symbols and definitions 1 ir forward voltage application rate (v/ps) ? the rate of rise of forward voltage. forward breakover (switcht ng) current ? the value of anode current at the instant the device switches from the blocking to the ?on? state, specified at a particular junction temperature. forward current ? the continuous or dc value.of forward current during the ?on? state. ,\l*f(.? ,:,. ,.l~y., peak forward blocking current ? tr&.pe~b anode current when the 4-layer diode is in the.;@$?*~?&te for a stated anode-to-cathode voltage and jun,~~~~ ?&per- ture. ,,t:,,* \ ..:j.i, ,1$,$? 1.?.. !4 ,,, ..,> holding current ? that value $$:,? $ ~~?hard anode current below wh; ch the 4-laver dio~$+~fi~$dhes from the conducting state to the forward bl.o*,&{,~,$~kon dition. ,il,$):~ peak pulse current ? t$e ~ah? repetitive current that can flow through th:,+@@%~&~.*r the time duration stated. y.! ?!&, .?1.. ,,.,,.s> ,)., ,,.,,. ~: peak reverse b~~~~~ current ? the peak current when the, $-ia~~$,:@ode is in the reverse blocking state for a state@ a@ode~to-cathode voltage and junction temperature. ;~~~++? steady ~~~~$$p~wer dissipation *i ~ :;>:.,, ?~~.?~ ,,. ,.. ,i;:,\ toff vs vf vfe vrm point (90% of forward blocking voltage) and the point 10% above the ?on? voltage under stated conditions. turn-off time ? the time interval required for the device to regain control of its forward blocking character- istic after interruption of forward anode current. forward breakover (switching) voltage ? the positive anode voltage with respect to cathode re- quired to switch the device from the high impedance blocking state to the low impedance ?on? state, specified at a particular junction temperature. forward voltage ? the forward voltage across the device in the ?on? state under stated conditions of current and temperature. forward blocking voltage ? the anode-to-cath- ode voltage when the 4-layer diode is in the ?off? state. peak reverse voltage ? the maximum allowable instantaneous value of reverse voltage (repetitive or contin- uous dc) which can be applied to the device at a stated temperature without damage to the device. mechanical characteristics case: hermetically sealed all glass case dimensions: jedec do-7 outline finish: all external surfaces are corrosion resistant with readily solderable leads. polarity: cathode end indicated bv color band. weight: 0.2 grams (approx.) mounting position: anv ? (m) motorola semiconductor products inc. ? ? u q ox 20912 . phoenix, ar]20na 85036 . a subsidiary of motorola inc. 969-5 printed in usa 12-72 imperial litho b33663 6,\4 n 6510r1 www.datasheet.co.kr datasheet pdf - http://www..net/
|
